IPG Photonics is revolutionizing the laser industry as the pioneering developer and leading producer of fiber lasers and amplifiers. Headquartered in Marlborough, MA, IPG has over 6,500 employees in more than 30 locations around the world. We aspire to work together with our employees and customers to apply light in ways that improve life.

Our mission is to develop innovative laser solutions to make the world a better place. To accomplish this mission, we are committed to attracting and retaining the best talent and an engaged, diverse, and thriving workforce that drives a sustainable future for our company and society.

Working at IPG Photonics you can expect challenging projects, a motivating and friendly environment, and competitive benefits.

Job Summary

Engineers at IPG Photonics are developing all aspects of laser products and accessories to provide solutions for our customers. Our engineers apply their talents to build new products and systems from scratch to mass production. These challenges allow our teams to explore opportunities that continue to push our technology forward. The Epitaxial Engineer is responsible for the operation and maintenance of one or more Molecular Beam Epitaxy (MBE) systems growing III-V semiconductors-based diode laser structures to support production and engineering development needs.

Job Function

• The Epitaxial Engineer will guide the installation of a brand new, state-of-the-art GaAlInAs - GaSb MBE system and develop growth process for quantum cascade diode lasers for midinfrared wavelength range.
• Work with senior engineers to sustain established growth processes and tools in the MBE department.
• Responsible for making continuous process improvements using IPG methodologies, implementing statistical controls for yield improvement, and cost reduction projects to completion.
• Responsibilities also include qualifying new tools for production including documentation and training/certification of operators, MBE system troubleshooting, repair, and maintenance.

Requirements

• PhD or MS in Materials Science, Physics, or Electrical Engineering and 5-year direct epitaxial experience is required (MOCVD or MBE).
• Must have extensive experience in the scientific and engineering aspects of compound semiconductor growth including material and structure characterization.
• Some experience growing III-V semiconductors-based diode laser structures by MBE (especially InP-based quantum cascade lasers and GaSb-based cascade diode lasers for midinfrared wavelength range) is preferable.
• Must have experience working with semiconductor materials, devices, vacuum, electronics, and computer skills.
• Some experience with processing and characterization of edge-emitting laser diodes is preferable.
• Must be self-motivated, take initiative, and be accountable.
• Effective communication skills and the ability to work in a team environment are required.
• Must be able to work flexible hours Monday through Friday 8 am- 6 pm

This position must meet Export Control compliance requirements, therefore a "US Person" as defined by 22C.F.R. *120.15 are required. "US Person" includes US Citizen, lawful permanent resident, refugee, asylee. License exception Technology and software under restriction (TSR) defined in 15 CFR 740.6 may permit person from Country Group B.

The following link will take you to the government site with the list of Country Group B:

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